High temperature Raman spectroscopy study on the microstructure of the boundary layer around a growing LiBO crystal
CrystEngComm, ISSN: 1466-8033, Vol: 13, Issue: 16, Page: 5239-5242
2011
- 26Citations
- 11Captures
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Article Description
High temperature Raman spectroscopy has been applied to investigate in situ the microstructure of the high temperature solution near a LiB O (LBO) crystal-solution interface. A preordering boundary layer was found around the interface. In the boundary layer, an isomerization reaction between 3-coordinated and 4-coordinated boron was observed. The reaction led to the formation of BØ triborate groups, the characteristic structural group involved in the LBO crystal. According to the mechanism, the growth habits of LBO crystal can be understood well. © 2011 The Royal Society of Chemistry.
Bibliographic Details
Royal Society of Chemistry (RSC)
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