A uniform porous multilayer-junction thin film for enhanced gas-sensing performance
Nanoscale, ISSN: 2040-3372, Vol: 8, Issue: 3, Page: 1430-1436
2016
- 47Citations
- 36Captures
- 2Mentions
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations47
- Citation Indexes46
- 46
- CrossRef44
- Patent Family Citations1
- Patent Families1
- Captures36
- Readers36
- 36
- Mentions2
- News Mentions2
- News2
Most Recent News
A uniform porous multilayer-junction thin film for enhanced gas-sensing performance
(Before It's News) Where size matters Nanoscale , 2016, Advance Article DOI : 10.1039/C5NR05195A, Paper Ping-Ping Zhang, Hui Zhang, Xu-Hui Sun Highly-uniform In 2 O
Article Description
Highly-uniform InO/CuO bilayer and multilayer porous thin films were successfully fabricated using a self-assembled soft template and a simple sputtering deposition technique. The sensor based on the InO/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at a lower working temperature, compared to its single layer counterpart sensors. The response of the InO/CuO bilayer sensors exhibit nearly 3 and 5 times higher performance than those of the single layer InO and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on the p-n hetero-junction, which contributed to the enhanced sensing performance, was also experimentally confirmed by a control experiment in which an SiO insulation layer was inserted between the InO and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of InO/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84954141526&origin=inward; http://dx.doi.org/10.1039/c5nr05195a; http://www.ncbi.nlm.nih.gov/pubmed/26673658; https://xlink.rsc.org/?DOI=C5NR05195A; http://xlink.rsc.org/?DOI=C5NR05195A; http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR05195A; https://dx.doi.org/10.1039/c5nr05195a; https://pubs.rsc.org/en/content/articlelanding/2016/nr/c5nr05195a
Royal Society of Chemistry (RSC)
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