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Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se solar cells via interface engineering by a wet soaking process

Journal of Materials Chemistry A, ISSN: 2050-7496, Vol: 3, Issue: 29, Page: 14985-14990
2015
  • 11
    Citations
  • 0
    Usage
  • 11
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    11

Article Description

A facile wet soaking process by immersing a CIGS thin film in a mixed aqueous solution, containing gallium trichloride and thioacetamide at 80 °C for a few tens of seconds, was proposed to reduce the existence of defects in the CIGS absorption layer which can be confirmed by the temperature dependence of the open-circuit voltage (V). The depth profiles of X-ray photoelectron spectroscopy (XPS) results indicate that the gallium (Ga) concentration increases during the short wet soaking time, resulting in a widening of the band gap near the surface region. The enhanced carrier lifetime attributed to the Ga-induced defect reduction during thermal treatment of device fabrication was evaluated by time-resolved photoluminescence (TRPL) spectroscopy. With wet and light soaking processes, V, short circuit current (J) and fill factor (F.F.) can be increased, yielding a significant enhancement in cell efficiency from ∼1% to ∼6.4%. We believe that this fast, simple and effective method can further stimulate the development of CBD-Zn(O,S)/post-selenization CIGS solar cells toward commercialized thin film photovoltaics.

Bibliographic Details

Chia Wei Chen; Hung Wei Tsai; Tsung Ta Wu; Yu Ting Yen; Yi Chung Wang; Cheng Hung Hsu; Wen Chi Tsai; Hsu Sheng Tsai; Yu Lun Chueh; Chang Hong Shen; Jia Min Shieh

Royal Society of Chemistry (RSC)

Chemistry; Energy; Materials Science

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