Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se solar cells via interface engineering by a wet soaking process
Journal of Materials Chemistry A, ISSN: 2050-7496, Vol: 3, Issue: 29, Page: 14985-14990
2015
- 11Citations
- 11Captures
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Article Description
A facile wet soaking process by immersing a CIGS thin film in a mixed aqueous solution, containing gallium trichloride and thioacetamide at 80 °C for a few tens of seconds, was proposed to reduce the existence of defects in the CIGS absorption layer which can be confirmed by the temperature dependence of the open-circuit voltage (V). The depth profiles of X-ray photoelectron spectroscopy (XPS) results indicate that the gallium (Ga) concentration increases during the short wet soaking time, resulting in a widening of the band gap near the surface region. The enhanced carrier lifetime attributed to the Ga-induced defect reduction during thermal treatment of device fabrication was evaluated by time-resolved photoluminescence (TRPL) spectroscopy. With wet and light soaking processes, V, short circuit current (J) and fill factor (F.F.) can be increased, yielding a significant enhancement in cell efficiency from ∼1% to ∼6.4%. We believe that this fast, simple and effective method can further stimulate the development of CBD-Zn(O,S)/post-selenization CIGS solar cells toward commercialized thin film photovoltaics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84953876960&origin=inward; http://dx.doi.org/10.1039/c5ta03211c; http://xlink.rsc.org/?DOI=C5TA03211C; http://pubs.rsc.org/en/content/articlepdf/2015/TA/C5TA03211C; https://xlink.rsc.org/?DOI=C5TA03211C; https://dx.doi.org/10.1039/c5ta03211c; https://pubs.rsc.org/en/content/articlelanding/2015/ta/c5ta03211c
Royal Society of Chemistry (RSC)
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