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High thermoelectric performance of polycrystalline InSe(CuI): ynergistic effects of the Se-deficiency and CuI-doping

Inorganic Chemistry Frontiers, ISSN: 2052-1553, Vol: 3, Issue: 12, Page: 1566-1571
2016
  • 10
    Citations
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  • 8
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    10
    • Citation Indexes
      10
  • Captures
    8

Article Description

Polycrystalline n-type InSe-based materials are established and promising mid-temperature range thermoelectric materials. Herein, we report that synergistic effects of a Se-deficiency and CuI-doping significantly improve the thermoelectric properties of CuI-doped InSe materials via increasing the power factor (PF), an increase of up to 105%, and enhancing the figure-of-merit (ZT), by about 80%, compared to the undoped ones. The CuI-doping (x) significantly lowers the electrical resistivity and enhances the power factor (PF); and the PF increases with increase of x. But the maximum solubility of the CuI-dopant (x) is restricted by the amount of the Se-deficiency (δ), and it closely approaches the δ in the form of x < δ. Thus, the greater the δ, the greater the PF. On the other hand, the greater the Se-deficiency, the more Cu that will occupy the intercalation sites, which increases the atom packing density and thus indispensably increases the thermal conductivity (κ); and consequently the lower the δ, the lower the κ. Such a synergistic effect ensures a balance between improving the PF and lowering the κ, so as to give rise to a considerable ZT enhancement. For example, InSe(CuI) and InSe(CuI) provide a ZT of 1.20 and 1.08, respectively, which are about 80 and 66% enhanced in comparison with the un-doped ones. Especially, a ZT = 1.34 at 723 K is obtained for InSe(CuI), representing the highest value obtained for Pb-free polycrystalline InSe-based materials to date. This insight offers guidance for further studies on these and related TE materials.

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