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In situ formation of CsPbBr/ZnO bulk heterojunctions towards photodetectors with ultrahigh responsivity

Journal of Materials Chemistry C, ISSN: 2050-7526, Vol: 6, Issue: 45, Page: 12164-12169
2018
  • 39
    Citations
  • 0
    Usage
  • 18
    Captures
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    Mentions
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    39
    • Citation Indexes
      39
  • Captures
    18

Article Description

In this study, we report a facile solution method to construct a high-performance photodetector (PD) based on in situ formed CsPbBr/ZnO bulk heterojunctions. Owing to the promoted charge separation and transfer at heterojunctions, the photocurrent of the CsPbBr/ZnO PD is greatly enhanced as compared to the pristine CsPbBr PD, and ZnO can passivate the perovskite to eliminate trap states on its surface and grain boundaries, which favors the charge carrier transport. As a result, the CsPbBr/ZnO PD exhibits an ultrahigh responsivity of 358 A W and a high on/off ratio of 10. In addition, the device shows a fast photoresponse (rise time: 0.88 ms and decay time: 1.53 ms). It is also revealed that the device has excellent stability after storage for 1 month in air. By deploying the PDs as an integrated detector array, we can acquire clear images. We believe that this work can inspire the facile and low-cost fabrication of high-performance perovskite-based PDs for imaging applications.

Bibliographic Details

Shen, Yalong; Wei, Chao; Ma, Lianbo; Wang, Shalong; Wang, Xiong; Xu, Xiaobao; Zeng, Haibo

Royal Society of Chemistry (RSC)

Chemistry; Materials Science

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