In situ formation of CsPbBr/ZnO bulk heterojunctions towards photodetectors with ultrahigh responsivity
Journal of Materials Chemistry C, ISSN: 2050-7526, Vol: 6, Issue: 45, Page: 12164-12169
2018
- 39Citations
- 18Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
In this study, we report a facile solution method to construct a high-performance photodetector (PD) based on in situ formed CsPbBr/ZnO bulk heterojunctions. Owing to the promoted charge separation and transfer at heterojunctions, the photocurrent of the CsPbBr/ZnO PD is greatly enhanced as compared to the pristine CsPbBr PD, and ZnO can passivate the perovskite to eliminate trap states on its surface and grain boundaries, which favors the charge carrier transport. As a result, the CsPbBr/ZnO PD exhibits an ultrahigh responsivity of 358 A W and a high on/off ratio of 10. In addition, the device shows a fast photoresponse (rise time: 0.88 ms and decay time: 1.53 ms). It is also revealed that the device has excellent stability after storage for 1 month in air. By deploying the PDs as an integrated detector array, we can acquire clear images. We believe that this work can inspire the facile and low-cost fabrication of high-performance perovskite-based PDs for imaging applications.
Bibliographic Details
Royal Society of Chemistry (RSC)
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