A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants
Analytical Methods, ISSN: 1759-9679, Vol: 11, Issue: 31, Page: 3981-3986
2019
- 21Citations
- 21Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution. The DEG-AlGaN/GaN HEMT sensor consists of two extended gate sensing units, which combine the differential method with the extended gate structure. Ionic pollutant Fe is used to test the feasibility of the device. Compared to the conventional AlGaN/GaN HEMT sensor, DEG-AlGaN/GaN HEMT sensors can effectively reduce the effect of noise factors and successfully improve the detection limit to 10 fM. At the same time, the DEG sensor shows that Fe can be detected in a wide range of concentrations, varying from 10 fM to 100 μM, and it shows better linearity (R = 0.9955) than the conventional AlGaN/GaN HEMT sensor. These results demonstrate that the unique DEG design can overcome the drawbacks of the conventional AlGaN/GaN HEMT sensor, and significantly improve the overall performance of the AlGaN/GaN HEMT sensor. As a result, this novel sensor has the potential to be a real-time and high-performance test tool for environmental monitoring.
Bibliographic Details
Royal Society of Chemistry (RSC)
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