CVD controlled growth of large-scale WS monolayers
RSC Advances, ISSN: 2046-2069, Vol: 9, Issue: 51, Page: 29628-29635
2019
- 22Citations
- 72Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Monolayer tungsten disulfide (WS) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS. In this paper, we report the chemical vapor deposition (CVD) growth behavior of hexagonal WS monolayers by using WS powders and sodium triosulfate (NaSO) as precursors. We observed the NaSO has a significant effect on the WS triangular and leaf-like shapes. In addition, based on proposed S-termination and W-termination theory, the growth mechanisms for different shapes of WS were discussed.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85072658809&origin=inward; http://dx.doi.org/10.1039/c9ra06219j; http://www.ncbi.nlm.nih.gov/pubmed/35531507; https://xlink.rsc.org/?DOI=C9RA06219J; https://dx.doi.org/10.1039/c9ra06219j; https://pubs.rsc.org/en/content/articlelanding/2019/ra/c9ra06219j
Royal Society of Chemistry (RSC)
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