Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes
Electronics Letters, ISSN: 0013-5194, Vol: 35, Issue: 20, Page: 1740-1742
1999
- 3Citations
- 3Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes with contact resistivity as low as 4.2 × 10 Ωcm are reported. This contact layer is basically dislocation free due to the low level of lattice misfit, as confirmed by TEM observations. The ZnSe layer serves as a contact layer and also as a protection layer for BeTe against oxidation. The electrical properties of the contact layers are strongly dependent on the ZnSe layer thickness. Au diffusion through the ZnSe layer down to the BeTe layer at room temperature is found to be responsible for the ohmic properties.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0033193759&origin=inward; http://dx.doi.org/10.1049/el:19991220; http://digital-library.theiet.org/doi/10.1049/el%3A19991220; http://dx.doi.org/10.1049/el%3A19991220; https://dx.doi.org/10.1049/el%3A19991220; http://mr.crossref.org/iPage?doi=10.1049%2Fel%3A19991220
Institution of Engineering and Technology (IET)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know