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Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes

Electronics Letters, ISSN: 0013-5194, Vol: 35, Issue: 20, Page: 1740-1742
1999
  • 3
    Citations
  • 0
    Usage
  • 3
    Captures
  • 0
    Mentions
  • 28
    Social Media
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Metrics Details

  • Citations
    3
    • Citation Indexes
      3
  • Captures
    3
  • Social Media
    28
    • Shares, Likes & Comments
      28
      • Facebook
        28

Article Description

Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes with contact resistivity as low as 4.2 × 10 Ωcm are reported. This contact layer is basically dislocation free due to the low level of lattice misfit, as confirmed by TEM observations. The ZnSe layer serves as a contact layer and also as a protection layer for BeTe against oxidation. The electrical properties of the contact layers are strongly dependent on the ZnSe layer thickness. Au diffusion through the ZnSe layer down to the BeTe layer at room temperature is found to be responsible for the ohmic properties.

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