Mid-infrared quantum dot barrier photodetectors with extended cutoff wavelengths
Electronics Letters, ISSN: 0013-5194, Vol: 46, Issue: 18, Page: 1286-1288
2010
- 37Citations
- 21Captures
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Article Description
A method to extend the cutoff wavelength of mid-infrared barrier photodetectors by incorporating self-assembled InSb quantum dots into the active area of the detector is demonstrated. This approach enables the extension of the cutoff wavelength of barrier photodetectors from 4.2 to 6m, demonstrating infrared response at temperatures up to 225K. © 2010 The Institution of Engineering and Technology.
Bibliographic Details
Institution of Engineering and Technology (IET)
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