Illumination effect on switching performance of a triangular-barrier resonant-tunnelling diode
IEE Proceedings: Optoelectronics, ISSN: 1350-2433, Vol: 148, Issue: 2, Page: 121-123
2001
- 28Citations
- 1Captures
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Article Description
The illumination effect on switching performance is presented for a triangular-barrier resonant-tunnelling diode (TBRDT). A δ-doped quantum well is inserted into the centre of the TBRTD. Owing to the resonant tunnelling through the miniband in the quantum well, an N-shaped negative-differential-resistance phenomenon is observed in the current-voltage characteristics. The device shows a flexible optical function related to the cap-layer conductivity and a potential barrier height which can be changed by incident light.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035303359&origin=inward; http://dx.doi.org/10.1049/ip-opt:20010068; https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20010068; https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20010068?crawler=true&mimetype=application/pdf; http://dx.doi.org/10.1049/ip-opt%3A20010068; https://dx.doi.org/10.1049/ip-opt%3A20010068; http://mr.crossref.org/iPage?doi=10.1049%2Fip-opt%3A20010068
Institution of Engineering and Technology (IET)
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