PlumX Metrics
Embed PlumX Metrics

Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

E3S Web of Conferences, ISSN: 2267-1242, Vol: 413
2023
  • 0
    Citations
  • 0
    Usage
  • 0
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Conference Paper Description

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a currentcollecting "P"-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.

Bibliographic Details

I. B. Sapaev; B. Sapaev; S. Sadullaev; J. Sh. Abdullayev; A. V. Umarov; R. U. Siddikov; A. A. Mamasoliev; K. S. Daliev; D.V. Rudoy; A.V. Olshevskaya; M.Yu. Odabashyan

EDP Sciences

Environmental Science; Energy; Earth and Planetary Sciences

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know