Planar stress relaxation in solid phase epitaxial CaF films grown on (111)Si by in situ rapid isothermal processing
Applied Physics Letters, ISSN: 0003-6951, Vol: 56, Issue: 16, Page: 1567-1569
1990
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Article Description
Planar strain in CaF films on (111) Si substrate has been measured by an x-ray double-crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.
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