Quantized conductance in ballistic constrictions at 30 K
Applied Physics Letters, ISSN: 0003-6951, Vol: 59, Issue: 21, Page: 2727-2729
1991
- 32Citations
- 4Captures
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Article Description
Quantized conductance in a split-gate structure is observed at a temperature of 30 K. Plateaus in the conductance as a function of gate voltage are observed at 30 K, while traces of the first step exist as high as 44 K. Plateaus are also seen with a bias of up to 12 mV across the constriction. This performance is made possible by placing the two-dimensional electron gas (2DEG) 30 nm below the surface, and a gate separation of 100 nm. Simulations of this structure, using two-dimensional, self-consistent solutions of Schrödinger's and Poisson's equations, suggest subband separations of 10 meV.
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