Radiative recombination in GaAs-AlGaAs quantum dots
Applied Physics Letters, ISSN: 0003-6951, Vol: 61, Issue: 8, Page: 946-948
1992
- 37Citations
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Article Description
We present experimental and theoretical results on the low-temperature luminescence intensity of dry-etched GaAs-AlGaAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 μm to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of ∼10 cm/s for GaAs, we can obtain a good fit to the data.
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