Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBaCuO thin films
Applied Physics Letters, ISSN: 0003-6951, Vol: 61, Issue: 24, Page: 2884-2886
1992
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Article Description
High-quality YBaCuO films were grown in situ on LaAlO (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd), (thd=2,2,6,6-tetramethyl-3-5- heptanedionate; M=Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa CuO was formed in situ at a substrate temperature 680°C. The as-deposited films exhibited a mirrorlike surface, had transition temperature T0≅89 K, ΔT<1 K, and J (77 K)=10 A/cm.
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