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Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBaCuO thin films

Applied Physics Letters, ISSN: 0003-6951, Vol: 61, Issue: 24, Page: 2884-2886
1992
  • 58
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    58
    • Citation Indexes
      58
  • Captures
    4

Article Description

High-quality YBaCuO films were grown in situ on LaAlO (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd), (thd=2,2,6,6-tetramethyl-3-5- heptanedionate; M=Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa CuO was formed in situ at a substrate temperature 680°C. The as-deposited films exhibited a mirrorlike surface, had transition temperature T0≅89 K, ΔT<1 K, and J (77 K)=10 A/cm.

Bibliographic Details

Jiming Zhang; Robin A. Gardiner; Peter S. Kirlin; Robert W. Boerstler; John Steinbeck

AIP Publishing

Physics and Astronomy

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