Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers
Applied Physics Letters, ISSN: 0003-6951, Vol: 61, Issue: 17, Page: 2051-2053
1992
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Article Description
This letter shows that selective heteroepitaxy of nanometer-scale InAs whiskers on SiO-patterned GaAs substrates [Yazawa, Koguchi, and Hiruma, Appl. Phys. Lett. 58, 1080 (1991)] is induced by surface contamination with Au resulting from the fluorocarbon plasma etching process used to etch the SiO mask. We demonstrate that high densities (≅10 /cm) of InAs nanowhiskers 20-30 nm in diameter can be epitaxially grown on InAs(111)B substrates onto which 1 monolayer of Au atoms had been deposited. This wirelike growth appears to be induced by ultrafine alloy droplets generated by the reactions between Au-clusters and InAs substrates.
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