AlGaAs/AlGaAs and GaAs pseudo-heterojunction bipolar transistors with lateral emitter resistor
Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 9, Page: 994-996
1993
- 4Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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- Citations4
- Citation Indexes4
- CrossRef2
Article Description
Both AlGaAs/AlGaAs and GaAs pseudo-heterojunction bipolar transistors (HBTs) with lateral emitter resistors (laterally extended emitter ledge) are shown to exhibit base current ideality factors of 1.3 and 1.1, and uniform current gains of 10 and 5, respectively, even at current densities as low as 5×10 A/μm. With this test structure, it is possible to separate the surface effects from the bulk effects. The structures investigated also allowed the confirmation that the emitter edge-thinning reported recently is very effective for reducing the surface recombination. The structures under investigation also show that GaAs HBTs can operate at collector currents in the microampere range or below.
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