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CuInSe homojunction diode fabricated by phosphorus doping

Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 14, Page: 1656-1657
1993
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  • 10
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    7
    • Citation Indexes
      7
  • Captures
    10

Article Description

Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1×10 ions/cm showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.

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