Impact ionization in silicon
Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 25, Page: 3339-3341
1993
- 147Citations
- 58Captures
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Article Description
The electron dynamics for electron energies up to 5 eV has been studied by soft x-ray photoemission spectroscopy. Monte Carlo simulations have been performed to derive the energy dependence of the pair-production rate using these results in combination with published data on the ionization coefficient and on the quantum yield for pair production. The obtained ionization rate shows a very soft threshold at 1.2 eV, approaching the results by Kane [Phys. Rev. 159, 624 (1967)] at higher energies. Several published models have been found to be inconsistent with the full set of experimental data we have considered.
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