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Impact ionization in silicon

Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 25, Page: 3339-3341
1993
  • 147
    Citations
  • 0
    Usage
  • 58
    Captures
  • 0
    Mentions
  • 0
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Metrics Details

  • Citations
    147
    • Citation Indexes
      147
  • Captures
    58

Article Description

The electron dynamics for electron energies up to 5 eV has been studied by soft x-ray photoemission spectroscopy. Monte Carlo simulations have been performed to derive the energy dependence of the pair-production rate using these results in combination with published data on the ionization coefficient and on the quantum yield for pair production. The obtained ionization rate shows a very soft threshold at 1.2 eV, approaching the results by Kane [Phys. Rev. 159, 624 (1967)] at higher energies. Several published models have been found to be inconsistent with the full set of experimental data we have considered.

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