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Valence band offset of GaAs/GaAsP multiple quantum wells

Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 17, Page: 2078-2080
1993
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Low-temperature photoluminescence measurements have been performed under hydrostatic pressure on GaAs/GaAsP strained multiple quantum well samples grown by gas-source molecular beam epitaxy. The pressure induced crossover of the first confined electron state in the GaAs wells against the conduction band (001) X minima in the GaAs P barriers has been observed, which allows a direct spectroscopic determination of the valence band offset for the heterostructure. As the result we obtain the unstrained valence band offset as 0.09±0.02 eV, which corresponds to an approximate 77:23 distribution of the energy gap difference in the conduction and valence bands, respectively, for the GaAs/GaAsP system.

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