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Preparation of CuInS films by sulfurization of Cu-In-O films

Applied Physics Letters, ISSN: 0003-6951, Vol: 62, Issue: 16, Page: 1943-1945
1993
  • 29
    Citations
  • 0
    Usage
  • 5
    Captures
  • 0
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Metrics Details

  • Citations
    29
    • Citation Indexes
      29
  • Captures
    5

Article Description

CuInS thin films are prepared by using a newly developed two-stage process comprised of a first process by which Cu-In-O films are prepared from a CuInO target by a pulsed laser deposition, and a second process by which the prepared Cu-In-O films are transformed into CuInS films by applying an annealing in a H S gas. The characteristics of thus obtained CuInS films are determined by using an x-ray diffractometer, an energy dispersive x-ray spectrometer, and a scanning electron microscope, in addition to a spectrophotometer. The CuInS film with chalcopyrite-type structure is obtained when it is annealed at a temperature higher than 400°C. The effect of annealing temperature on its structural and optical properties is being analyzed.

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