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Observation of resonant and stimulated Raman scattering in ZnSe/CdSe quantum wells grown by atomic layer epitaxy

Applied Physics Letters, ISSN: 0003-6951, Vol: 63, Issue: 10, Page: 1378-1380
1993
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This letter reports the successful growth of short period (ZnSe) /CdSe strained layer superlattices on (100) GaAs surface by atomic layer epitaxy. The superlattice was characterized by x-ray diffraction and Raman scattering. Superlattice period was calculated from the satellite peaks and was in good agreement with the expected value. 2LO Raman scattering in resonance with the E exciton level was observed. Experimental exciton energy was compared with the one calculated in a finite-square-well model. A Raman line due to stimulated Raman scattering was also observed.

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