Ozone-induced rapid low temperature oxidation of silicon
Applied Physics Letters, ISSN: 0003-6951, Vol: 63, Issue: 18, Page: 2517-2519
1993
- 42Citations
- 13Captures
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Article Description
We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550°C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550°C films up to 260 Å in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850°C.
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