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X-ray photoemission characterization of thin epitaxial Fe silicide phases on Si(111)

Applied Physics Letters, ISSN: 0003-6951, Vol: 63, Issue: 17, Page: 2360-2362
1993
  • 14
    Citations
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  • 4
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Metrics Details

  • Citations
    14
    • Citation Indexes
      14
  • Captures
    4

Article Description

Depending on preparation conditions, Fe silicides grown on Si(111) by means of solid phase epitaxy and molecular beam epitaxy show the formation of the bulk ε-FeSi and β-FeSi phases as well as epitaxially grown metastable CsCl- and CaF-type Fe silicides. The valence-band of these Fe silicides are measured with monochromatized Al Kα x-ray photoemission and angle resolved ultraviolet photoemission and are found to be in remarkable agreement with calculated densities of states.

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