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Positive charging of buried SiO by hydrogenation

Applied Physics Letters, ISSN: 0003-6951, Vol: 64, Issue: 19, Page: 2575-2577
1994
  • 27
    Citations
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  • 5
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    27
    • Citation Indexes
      27
  • Captures
    5

Article Description

Simple hydrogen annealing of the buried oxide (BOX) of state-of-the-art separation by implanted oxygen material in the range 450-700°C was found to introduce net positive charge in the BOX with areal densities up to 5×10 elem. charges cm, while H annealing in the range 700-1000°C was observed to activate a neutral state. Both processes appeared reversible upon appropriate vacuum annealing. The positive charge in the BOX is detected using electron spin resonance of a positive BOX-charge-induced signal in Si. The results are interpreted in terms of a two-state model which describes the trapping of hydrogen at a reactive site yielding an either positively charged (activation temperature T ≊450°C) or neutral (T≊715°C) state, based on hydrogen incorporation into oxygen vacancies (Si - Si bonds).

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