Atomic layer epitaxy of AlAs using ethyldimethylamine alane as a new aluminum source
Applied Physics Letters, ISSN: 0003-6951, Vol: 65, Issue: 9, Page: 1115-1117
1994
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Article Description
Atomic layer epitaxy (ALE) of AlAs layers has been studied with the alternate supplies of ethyldimethylamine alane (EDMAAl) and arsine as aluminum and arsenic sources. Self-limiting growth at either one- or two-monolayer per source supply cycle is clearly observed under the specific growth conditions defined by the substrate temperatures (250-650°C) and the flow rates of EDMAAl (0.8-1.1 and 1.5-1.7×10 sccm). Carbon concentration in the resultant AlAs layers is estimated to be about 10-10 cm.
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