Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries
Applied Physics Letters, ISSN: 0003-6951, Vol: 68, Issue: 6, Page: 838-null
1995
- 20Citations
- 5Captures
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Article Description
Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case. © 1996 American Institute of Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=36448998566&origin=inward; http://dx.doi.org/10.1063/1.116550; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0039868969&origin=inward; https://pubs.aip.org/apl/article/68/6/838/65973/Peak-to-valley-ratio-of-small-resonant-tunneling
AIP Publishing
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