Effect of surface reconstructions on the surface morphology during in situ etching of GaAs
Applied Physics Letters, ISSN: 0003-6951, Vol: 71, Issue: 5, Page: 695-697
1997
- 9Citations
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Article Description
The effect of surface reconstructions on the surface morphology of GaAs(001) during in situ etching in the solid surface molecular beam epitaxy (MBE) is studied using AsBr. Optimum condition for in situ etching of GaAs is found where the best surface morphology is obtained with the Ga-rick surface reconstruction close the phase transition boundary to the As-rich. The average surface roughness after 250 nm etching under the optimum condition is shown to be as smooth as the surface of an MBE grown buffer layer.
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