N-type delta-doped strained quantum well lasers for improved temperature-dependent performance
Applied Physics Letters, ISSN: 0003-6951, Vol: 72, Issue: 12, Page: 1484-1486
1998
- 14Citations
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Article Description
It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well. © 1998 American Institute of Physics.
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