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Lattice relaxation in ZnS epilayers grown on GaP

Applied Physics Letters, ISSN: 0003-6951, Vol: 72, Issue: 18, Page: 2304-2306
1998
  • 12
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  • 5
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Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    5

Article Description

The lattice relaxation of ZnS epilayers grown on GaP substrates by hot-wall epitaxy was investigated. The dependence of lattice constants and full widths at half-maximum of the double crystal rocking curves upon layer thickness was observed. The critical thickness for ZnS/GaP is found to be about 350 Å. The epilayers thinner than the critical thickness have almost the same lattice constants. The strain due to the lattice mismatch is almost relaxed in epilayers thicker than 2.5μm. © 1998 American Institute of Physics.

Bibliographic Details

Sungun Nam; Jongkwang Rhee; Young Moon Yu; Chong Kook Lee; Byungsung O; Ki Seon Lee; Yong Dae Choi

AIP Publishing

Physics and Astronomy

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