Strain compensated InGaAs(x<0.47) quantum well photodiodes for extended wavelength operation
Applied Physics Letters, ISSN: 0003-6951, Vol: 73, Issue: 16, Page: 2263-2265
1998
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- 4Captures
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Article Description
The use of highly strained (-2.0%) InGaAs quantum wells for the detection of light to a wavelength of λ∼2.0 μm is reported. Crystal quality for a 50 period multiple quantum well (MQW) detector grown on InP substrates is maintained through strain compensation using tensile strained InGaP barriers. Transmission electron microscopy and double crystal x-ray diffraction reveal smooth interfaces and no observable defects for InGaAs layers with widths less than 80 Å. Single-pass quantum efficiencies of 30% have been achieved at λ=1.95 μm, using a 75 μm diam MQW, strain-compensated, top illuminated, low dark current (∼250 pA at 20 V) p-i-n detector. The theoretical cutoff wavelength limit for diodes fabricated using this technique is calculated to be λ=2.15 μm. © 1998 American Institute of Physics.
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