A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
Applied Physics Letters, ISSN: 0003-6951, Vol: 74, Issue: 18, Page: 2581-2583
1999
- 16Citations
- 2Captures
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Article Description
We report an avalanche photodiode structure for use at wavelengths as long as 2.1 μm. Light is absorbed in a 100 period structure consisting of In GaAs quantum wells strain compensated by In0.83GaP barrier layers. Photogenerated electrons are injected into a high field InAlAs (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of ∼5 nA and responsivities of 45 A/W at a wavelength of 1.9 μm are observed. © 1999 American Institute of Physics.
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