2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy

Stimulated emission at 1.994 μm was demonstrated from an optically pumped, double quantum well, semiconductor laser that was digitally grown by modulated-molecular beam epitaxy. This "digital growth" consists of short period superlattices of the ternary GaInAs/GaInSb and GaAsSb/ GaSb/AlGaSb/GaSb alloys grown by molecular beam epitaxy with the intent of approximating the band gaps of quaternary GaInAsSb and AlGaAsSb alloys in the active region and barriers of the laser, respectively. For a 50 μs pulse and a 200 Hz repetition rate, the threshold current density was 104 W/cm at 82 K. The characteristic temperature (T) was 104 K, the maximum operating temperature was 320 K and the peak output power was 1.895 W/facet at 82 K with pumping power of 7.83 W. © 2000 American Institute of Physics.