Coulomb glass origin of defect-induced dielectric loss in thin-film oxides
Applied Physics Letters, ISSN: 0003-6951, Vol: 78, Issue: 25, Page: 4016-4018
2001
- 3Citations
- 6Captures
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Article Description
The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity σ′(ω) that scales as ω with s∼1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that σ′ should vanish at T=0. We observe that the ac conductivity of TaO, ZnO, and SiO has a nonzero extrapolated value at T=0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects. © 2001 American Institute of Physics.
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