Tuning the hopping conductivity of WO films by ion bombardment at different temperatures
Journal of Applied Physics, ISSN: 0021-8979, Vol: 90, Issue: 8, Page: 4007-4018
2001
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Article Description
WO films, either prepared by sputtering or evaporation under high or ultrahigh vacuum conditions, were irradiated with He and Ar ions (energy range 300-350 keV) at ambient and low temperatures (77-100 K). The resulting ion induced changes of the optical absorption as well as of the electrical conductivity could be determined on one and the same sample, which enables the variable range hopping (VRH) model to be tested under the assumption that the density of irradiation induced color centers is proportional to the electronic density of states contributing to the hopping conductivity. It is found that the data obtained at 300 K for He and Ar bombardment can be described within the VRH model by one common conductivity versus absorption curve, even though the effectiveness per projectile of the heavier ion for coloration as well as for increasing the conductivity is much higher. This is different at low temperatures. While the ion induced coloration is practically independent of the irradiation temperature for both projectiles, the effectiveness per projectile to enhance the conductivity is interchanged. This is attributed to the additional damage produced by the heavier ion at low temperatures resulting in strongly impeded hopping processes. Consistent with the VRH model, the temperature dependence of the conductivity of ion bombarded WO films follow the Mott "T-" law, if the ion induced conductivity is not too high. For very high ion fluences clear deviations from the VRH model are observed for the conductivity versus absorption curves accompanied by a shift of the above power laws from T towards T. © 2001 American Institute of Physics.
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