Synthesis of GaN quantum dots by ion implantation in dielectrics
Journal of Applied Physics, ISSN: 0021-8979, Vol: 90, Issue: 9, Page: 4467-4473
2001
- 52Citations
- 25Captures
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Article Description
GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions into either crystalline (quartz, sapphire) or amorphous (silica) dielectrics, followed by annealing of the samples in flowing NH gas at 900 °C. GaN was formed by reaction of implanted Ga with NH combustion products and/or via conversion of Ga oxide/oxynitrides. A blueshift of the near-band-edge photoluminescence (quantum-confinement effect) was observed for GaN nanocrystals with size ≤2-3 nm, present in all the substrates. © 2001 American Institute of Physics.
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