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Flux dependence of oxygen-beam-induced ripple growth on silicon

Applied Physics Letters, ISSN: 0003-6951, Vol: 79, Issue: 26, Page: 4334-4336
2001
  • 20
    Citations
  • 0
    Usage
  • 15
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    20
    • Citation Indexes
      20
  • Captures
    15

Article Description

The influence of flux on the growth of ripples on Si(111) under bombardment of oblique, 1 keV O beams was investigated. We found that a low flux leads to a significantly higher ripple growth rate per ion than a high flux. This effect is attributed to a reduction in the viscous flow of the amorphized material. At low fluxes, the viscous flow is reduced because there is more thermal annealing of the radiation damage. Current models of surface roughening remain valid if the flux dependence of the viscous flow is taken into account. © 2001 American Institute of Physics.

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