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Interfacial reactions of Ni on Si Ge (x=0.2,0.3) at low temperature by rapid thermal annealing

Journal of Applied Physics, ISSN: 0021-8979, Vol: 92, Issue: 1, Page: 214-217
2002
  • 65
    Citations
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  • 13
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Metrics Details

  • Citations
    65
    • Citation Indexes
      65
  • Captures
    13

Article Description

The interfacial reaction of Ni with relaxed Si Ge (x=0.2,0.3) films in the low temperature range, viz., 300-500°C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni (Si Ge ) and Ni (Si Ge ) were observed at 300°C whereas a uniform film of Ni(Si Ge ) was formed at 400°C for both Si Ge and Si Ge substrates. At 500°C, a mixed layer consisting of Ni(Si Ge ) and Si Ge was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400°C. The approximate values of the resistivity of the corresponding uniform Ni(Si Ge ) (x=0.2,0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μcm, respectively. © 2002 American Institute of Physics.

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