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Magnetic switching and magnetoresistance in nanoscale spin tunnel junctions

Journal of Applied Physics, ISSN: 0021-8979, Vol: 92, Issue: 10, Page: 6062-6065
2002
  • 5
    Citations
  • 0
    Usage
  • 14
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    5
    • Citation Indexes
      5
  • Captures
    14

Article Description

Co/AlO /Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by ∼10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurements show a strong dependence on the device geometry. We find that it is necessary to form tunnel junctions with electrode width ∼70 nm for the magnetic switching at the tunnel junction to be clean and single domain like. © 2002 American Institute of Physics. © 2002 American Institute of Physics.

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