HfO-based insulating stacks on 4H-SiC(0001)
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 6, Page: 922-924
2003
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Article Description
The deposition of HfO-based insulating stacks on 4H-SiC(0001) was demonstrated. The stack combined the high dielectric permittivity of HfO with the high quality of the ultrathin SiO/SiC interface and associated high energy barriers for electron and hole injection from SiC. The high dielectric permittivity of HfO allowed the application of high electric fields to the Sic surface, while keeping the strength of the field in the insulator at a moderate level.
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