Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 5, Page: 703-705
2003
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Article Description
The lattice parameters of GaN layers grown on a-plane sapphire were investigated. The hydride vapor phase epitaxy and metalorganic vapor phase epitaxy were used for the determination of parameters. The strain anisotropy was found to have different values in the films and obtained values of parameters were grouped around two values.
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