Formation trends in quantum dot growth using metalorganic chemical vapor deposition
Journal of Applied Physics, ISSN: 0021-8979, Vol: 93, Issue: 6, Page: 3529-3534
2003
- 83Citations
- 19Captures
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Article Description
Formation trends in quantum dot (QD) growth using metalorganic chemical vapor deposition (MOCVD) was studied. The nucleation rate and adatom surface migration was balanced to achieve high surface densities and to avoid QD coalescence or defects that characterize MOCVD-grown QD ensembles designed for longer wavelength emission. The ground state 1.3 μm electroluminescence from a QD light-emitting diode structure grown on n-type GaAs. The results of the growth matrix designed to produce high QD density was also discussed.
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