Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRhO/n-Zno
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 5, Page: 823-825
2003
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Article Description
Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRhO/n-ZnO were studied. Polycrystalline ZnRhO was deposited on a ZnO epitaxial layer at room temperature. The results show that the resultant p-n heterojunctions have an abrupt interface and exhibit a distinct rectifying I-V characteristics.
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