Effect of InAs quantum dots on the Fermi level pinning of undoped-n type GaAs surface studied by contactless electroreflectance
Journal of Applied Physics, ISSN: 0021-8979, Vol: 93, Issue: 7, Page: 4169-4172
2003
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Article Description
The effect of InAs quantum dots (QDs) on the Fermi level on the undoped-n GaAs surface was studied using room temperature contactless electroreflectance (CER). It was found that the 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for 1.8, 2.0 and 2.5 ML InAs coverage, the Fermi level is repinned about 70 meV deeper in the band gap compared to bare GaAs. The results suggested that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs rather than to the wetting layer.
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