Richardson's constant in inhomogeneous silicon carbide Schottky contacts
Journal of Applied Physics, ISSN: 0021-8979, Vol: 93, Issue: 11, Page: 9137-9144
2003
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Article Description
Richardson's constant in inhomogeneous silicon carbide Schottky contacts was determined. The temperature dependence of the ideality factor and of the SBH suggested the occurence of an inhomogeneous barrier. The correct determination of the Richardson's constant was obtained using experimental results by the Tung's model.
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