Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 23, Page: 4038-4040
2003
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Article Description
A high-performance InGaAs quantum-well lasers with an emission wavelength of 1215-1233 nm were demonstrated. The realization of diode lasers represented the longest emission wavelength realized with an InGaAs quantum well active region on a GaAs substrate. A high optical luminescence intensity from the highly strained InGaAs(N) quantum well was obtained with the utilization of the tensile buffer layer.
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