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Recent advances on electromigration in very-large-scale-integration of interconnects

Journal of Applied Physics, ISSN: 0021-8979, Vol: 94, Issue: 9, Page: 5451-5473
2003
  • 1,006
    Citations
  • 0
    Usage
  • 235
    Captures
  • 2
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    1,006
    • Citation Indexes
      1,006
  • Captures
    235
  • Mentions
    2
    • References
      2
      • 2

Review Description

The electromigration in Al,Cu and solder was compared on the basis of the ratio of their melting point to the device operating temperature of 100°C. The effects of microstructure, solute and stress on electromigration in Al, Cu and solder were found to be different. It was found that in mean-time-to-failure analysis, the time taken to nucleate a void is much longer than the growth of the void in Al and solder interconnects.

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