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Single-crystal organic field effect transistors with the hole mobility ∼8 cm/Vs

Applied Physics Letters, ISSN: 0003-6951, Vol: 83, Issue: 17, Page: 3504-3506
2003
  • 408
    Citations
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  • 269
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Metrics Details

  • Citations
    408
    • Citation Indexes
      408
  • Captures
    269

Article Description

Single-crystal organic field effect transistors (OFET) with the hole mobility ∼8 cm/V s were studied. The mobility for the single-crystal devices was nearly independent of the gate voltage and the field effect onset was very sharp. Results showed that for a gate insulator capacitance of 2±0.2 nF/cm, the subthreshold slope as small as 0.85 V/decade was observed.

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