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All-organic thin-film transistors patterned by means of selective electropolymerization

Applied Physics Letters, ISSN: 0003-6951, Vol: 83, Issue: 19, Page: 4044-4046
2003
  • 50
    Citations
  • 0
    Usage
  • 60
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    50
    • Citation Indexes
      50
  • Captures
    60

Article Description

Fully patterned all-organic thin-film transistors on polyimide substrates were fabricated using selective electropolymerization. Top-gate structures with gates printed on top of the gate dielectric layer were also developed. Highly p-doped silicon wafers were used as a base material for the anodes. Carrier mobilities as large as 0.01 cm/V s were measured.

Bibliographic Details

E. Becker; R. Parashkov; G. Ginev; D. Schneider; S. Hartmann; F. Brunetti; T. Dobbertin; D. Metzdorf; T. Riedl; H. H. Johannes; W. Kowalsky

AIP Publishing

Physics and Astronomy

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