All-organic thin-film transistors patterned by means of selective electropolymerization
Applied Physics Letters, ISSN: 0003-6951, Vol: 83, Issue: 19, Page: 4044-4046
2003
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Article Description
Fully patterned all-organic thin-film transistors on polyimide substrates were fabricated using selective electropolymerization. Top-gate structures with gates printed on top of the gate dielectric layer were also developed. Highly p-doped silicon wafers were used as a base material for the anodes. Carrier mobilities as large as 0.01 cm/V s were measured.
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