The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy
Applied Physics Letters, ISSN: 0003-6951, Vol: 85, Issue: 9, Page: 1547-1549
2004
- 37Citations
- 659Usage
- 50Captures
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Metrics Details
- Citations37
- Citation Indexes37
- 37
- CrossRef34
- Usage659
- Downloads647
- Abstract Views12
- Captures50
- Readers50
- 50
Article Description
The influence of hydrogen etching on 6H-SiC was investigated using atomic force microscopy and temperature-dependent current-voltage (I-V-T) measurements. It was observed that hydrogen etching had effectively removed mechanical polishing damage at temperatures above 1250°C. The current-voltage and I-V-T measurements were used for the analysis of Schottky diode characteristics. As the annealing temperature was increased from 1250 to 1450°C, a transition from defect assisted tunneling to thermionic emission was also observed. The annealing temperature was found to reduce the reverse bias leakage current.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=5044229213&origin=inward; http://dx.doi.org/10.1063/1.1786632; https://pubs.aip.org/apl/article/85/9/1547/116974/The-effect-of-hydrogen-etching-on-6H-SiC-studied; https://scholarscompass.vcu.edu/egre_pubs/138; https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1083&context=egre_pubs
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